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Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  11 February 2011

Sergey Yu. Karpov
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 27 Engels av., 194156 St. Petersburg, Russia
Alexander S. Segal
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 27 Engels av., 194156 St. Petersburg, Russia
Darya V. Zimina
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 27 Engels av., 194156 St. Petersburg, Russia
Sergey A. Smirnov
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 27 Engels av., 194156 St. Petersburg, Russia
Alexander P. Sid'ko
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 27 Engels av., 194156 St. Petersburg, Russia
Alexey V. Kondratyev
Affiliation:
Soft-Impact Ltd, P.O. Box 33, 27 Engels av., 194156 St. Petersburg, Russia
Yuri N. Makarov
Affiliation:
STR Inc, P.O. Box 70604, Richmond, VA 23255, USA
Denis Martin
Affiliation:
Institute for Quantum Electronics and Photonics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
Volker Wagner
Affiliation:
Institute for Quantum Electronics and Photonics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
Marc Ilegems
Affiliation:
Institute for Quantum Electronics and Photonics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland
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Abstract

On the basis of both experimental and theoretical studies, a simple quasi-thermodynamic model of surface kinetics is suggested for Hydride Vapor Phase Epitaxy (HVPE) of GaN, working in a wide range of growth conditions. Coupled with detailed 3D modeling of species transport in a horizontal reactor, the model provides quantitative predictions for the GaN growth rate as a function of process parameters. Significance of transport effects on growth rate uniformity is demonstrated.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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