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Transient Enhanced Diffusion of Arsenic by Self-Implantation —The role of As-I clusters—

Published online by Cambridge University Press:  17 March 2011

Ryangsu Kim
Affiliation:
Dept. of Electronics and Information Systems, Osaka University, Osaka, 565-0871 JAPAN, kim@eie.eng.osaka-u.ac.jp
Takenori Aoki
Affiliation:
Dept. of Electronics and Information Systems, Osaka University, Osaka, 565-0871, JAPAN
Yoshikazu Furuta
Affiliation:
Dept. of Electronics and Information Systems, Osaka University, Osaka, 565-0871, JAPAN
Hiroyuki Kobyashi
Affiliation:
Dept. of Electronics and Information Systems, Osaka University, Osaka, 565-0871, JAPAN
Jianxin Xia
Affiliation:
Dept. of Electronics and Information Systems, Osaka University, Osaka, 565-0871, JAPAN
Tomoya Saito
Affiliation:
Dept. of Electronics and Information Systems, Osaka University, Osaka, 565-0871, JAPAN
Yoshinari Kamakura
Affiliation:
Dept. of Electronics and Information Systems, Osaka University, Osaka, 565-0871, JAPAN
Kenji Taniguchi
Affiliation:
Dept. of Electronics and Information Systems, Osaka University, Osaka, 565-0871, JAPAN
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Abstract

Transient enhanced diffusion of implanted arsenic in silicon with/without additional self-implantation has been investigated. The experimental results show the suppression of As diffusion with Si self-implantation during initial stage of annealing in contrast to the prediction of conventional models. The results suggest that the arsenic and self-interstitial atoms might form immobile clusters during Si implantation or initial stage of annealing. After the clusters dissolve for further annealing, the transient enhanced diffusion of As increases with silicon implantation dose as expected from the “+1” model. These results clarify that interstitials/ As-I clusters play a major role in transient arsenic diffusion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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