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Transient Diffusion Effects of Sb and B In Si Induced by Medium- and High-Energy Implants of Si+ and As+ Ions

Published online by Cambridge University Press:  10 February 2011

G. Lulli
Affiliation:
CNR-Istituto LAMEL, Via P.Gobetti 101, 1-40129 Bologna, Italy
S. Solmi
Affiliation:
CNR-Istituto LAMEL, Via P.Gobetti 101, 1-40129 Bologna, Italy
M. Bianconi
Affiliation:
CNR-Istituto LAMEL, Via P.Gobetti 101, 1-40129 Bologna, Italy
E. Napolitani
Affiliation:
INFM, Dipartimento di Fisica G.Galilei, Universith degli Studi di Padova, Via Marzolo 8. 1-35131 Padova, Italy
A. Carnera
Affiliation:
INFM, Dipartimento di Fisica G.Galilei, Universith degli Studi di Padova, Via Marzolo 8. 1-35131 Padova, Italy
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Abstract

In this work we investigate the influence of defects injected by ions of different mass and energy on the diffusion of B and Sb markers in bulk Si. MeV (Si or As) ions induce Sb transient enhanced diffusion, whose amount increases with increasing the near-surface vacancy supersaturation generated by the knock-on recoil mechanism. The enhancement effect lasts less than 2 h at 800 °C and less than 10 min at 900 °C. At higher (1000 °C) annealing temperature it appears that the influence of extra-interstitials introduced by the implants comes into play, inducing a retardation in Sb diffusion which is larger for the higher close implant. The effect of vacancy supersaturation observed in medium-energy implanted samples is considerably weaker than the one found in high-energy implanted ones. In the case of B marker high-energy implantation induces moderate enhanced diffusion, much smaller than the one observed -after medium-energy implants.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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Transient Diffusion Effects of Sb and B In Si Induced by Medium- and High-Energy Implants of Si+ and As+ Ions
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