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Time-Resolved Gain Dynamics in Silicon Nanocrystals

Published online by Cambridge University Press:  10 February 2011

L. Dal Negro
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
M. Cazzanelli
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
N. Daldosso
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
L. Pavesi
Affiliation:
INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento)
F. Priolo
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Corso Italia 57, I-95129 Catania, Italia
G. Franzò
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Corso Italia 57, I-95129 Catania, Italia
D. Pacifici
Affiliation:
INFM-Dipartimento di Fisica, Università di Catania, Corso Italia 57, I-95129 Catania, Italia
F. Iacona
Affiliation:
CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italia
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Abstract

Time-resolved variable stripe length (VSL) experiments on a set of silicon nanocrystal waveguides obtained by plasma enhanced chemical vapor deposition (PECVD) have revealed a fast recombination dynamics (20 ns) related to population inversion under 6 ns optical pumping at 355 nm. Modal gain values about 10 cm-1 have been measured at 760 nm by VSL technique for the fast recombination component while optical losses about 15 cm-1 are measured for the integrated signal in the slow (lifetime of about 10 μs) recombination tail. Threshold behavior in the emission intensity together with a pumping length and pumping power dependence of both the intensity and the time duration of the fast recombination component has been observed. These results are explained within an effective four level model to describe the strong competition among different Auger processes and stimulated emission.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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