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Three Dimensional Modeling of Anisotropic Stress Effects in Thermal Oxidation of Silicon

Published online by Cambridge University Press:  01 February 2011

Xiaopeng Xu
Affiliation:
Avant! Corporation, 46871 Bayside Parkway, Fremont, CA94538, U.S.A.
Norbert Strecker
Affiliation:
Avant! Corporation, 46871 Bayside Parkway, Fremont, CA94538, U.S.A.
Victor Moroz
Affiliation:
Avant! Corporation, 46871 Bayside Parkway, Fremont, CA94538, U.S.A.
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Abstract

Three-dimensional analyses of anisotropic stress effects during thermal oxidation of silicon are performed in this study using finite strain formulation. A reaction rate model that conjugates pressure to a crystalline direction dependent activation volume is employed for the modeling of facet formation in an STI MOSFET device. The numerical results agree well with TEM observations. The 3-D nature of stress evolution in fabrication process is demonstrated and the implication of stress relaxation on device performance in a strained SiGe based device is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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