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Thin Film Transistors with Electron Mobility of 40 cm2V−1s−1 Made from Directly Deposited Intrinsic Microcrystalline Silicon

Published online by Cambridge University Press:  17 March 2011

I-Chun Cheng
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, U.S.A
Marcelo Mulato
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304, U.S.A
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Abstract

We report top-gate n channel μc-Si:H TFTs with saturated electron mobilities up to 40 cm2V−1s−1 and ON/OFF ratios up to ~106. The μc-Si:H was grown from silane, dichlorosilane, and hydrogen. The glow discharge was excited at a frequency of 80 MHz to raise the growth rate to ∼1Å/sec, which is above that achievable with 13.56 MHz. Deposition temperatures were 230°C for the i-layer and 280°C (the highest temperature in the process) for the n+ source and drain layers. The TFTs were fabricated from 340-nm thick μc-Si:H films, and with a 300-nm thick gate insulator of plasma deposited SiO2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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Thin Film Transistors with Electron Mobility of 40 cm2V−1s−1 Made from Directly Deposited Intrinsic Microcrystalline Silicon
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Thin Film Transistors with Electron Mobility of 40 cm2V−1s−1 Made from Directly Deposited Intrinsic Microcrystalline Silicon
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