Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-25T20:42:25.466Z Has data issue: false hasContentIssue false

Thin Film Formation of Perovskite Type Dielectric and Ferroelectric Materials(MTiO3,M=Ca,Sr,Ba and Pb) by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

Hitoshi Tabata
Affiliation:
Institute for Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan.
Hidekazu Tanaka
Affiliation:
Institute for Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan.
Tomoji Kawai
Affiliation:
Institute for Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan.
Get access

Abstract

We have formed thin films of ferroelectric and dielectric materials (BaTiO3, SrTiO3 and CaTiO3) by pulsed laser deposition on various kinds of substrates such as SrTiO3, LaAlO3 and MgO(100) single crystals. All the films can be formed epitaxially on the SrTiO3 substrate with c-axis orientation by choosing suitable conditions. The electrical behavior of these films such as dielectric constant and spontaneous polarization is quite similar to that of single crystals in bulk samples. The remanent polarization of BaTiO3 and PbTiO3 films are about 15 μC/cm2 and 80 μC/cm2, respectively. The value of 80 μC/cm2 is almost the same as that theoretically predicted and have not been obtain in the bulk samples. The unique advantage of the pulsed laser deposition technique is its ability to produce highly oriented stoichiometric films that show good electrical properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Inoue, N., Toyama, I., Kashiwabara, S., Toshima, S. and Fujimoto, R., J. Vacuum. Soc. Jpn. 36, 410 (1993).Google Scholar
2. Chern, C.S., Zhao, J., Lup, L., Lu, P., Li, Y.Q., Norris, P., Kear, B., Cosandey, F., Maggiore, C.J., Gallois, B. and Wilkens, B.J., Appl. Phys. Lett. 60, 1144 (1992).Google Scholar
3. Nakazawa, H., Yamane, H. and Hirai, T., Jpn. J. Appl. Phys., 30, 2200 (1991).Google Scholar
4. Kwak, B.S., Zhang, K., Boyd, E.P. and Erbil, A. and Wilkens, B.J., J. Appl. Phys. 69, 767 (1991).Google Scholar
5. Iijima, K., Terashima, T., Yamamoto, K., Hirata, K. and Bando, Y., Appl. Phys. Lett., 56, 527 (1990).Google Scholar
6. Uchio, K., Lee, N.Y., Oba, T., Ushiki, N., Aburataniand, H. Ito, Y.; J. Ceramic Soc. Jon. 100, 1091 (1992).Google Scholar