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Thickness and Strain Effects on RF/Microwave Properties of BST Thin Films on NdGaO3 Substrates

Published online by Cambridge University Press:  01 February 2011

William Kurt Simon
Affiliation:
Ceramic and Materials Engineering, Rutgers University, Piscataway, New Jersey 08854
E. Koray Akdogan
Affiliation:
Ceramic and Materials Engineering, Rutgers University, Piscataway, New Jersey 08854
Jeffery Bellotti
Affiliation:
Navy Research Laboratory, Washington D.C., District of Columbia 20375.
Ahmad Safari
Affiliation:
Ceramic and Materials Engineering, Rutgers University, Piscataway, New Jersey 08854
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Abstract

Ba0.60Sr0.40TiO3 thin films were deposited on <100> oriented NdGaO3 substrates by pulsed-laser deposition. Film thickness ranged from 20 nm to 800 nm. Microstructural features, as evaluated with AFM and FESEM, have exhibited high quality thickness dependent topography. X-ray analyses have shown consistently <110> textured films of high crystallinity. Permittivity, Q-factor, and tunability, were investigated using interdigitated capacitors in the 0.1–20 GHz range. Effect of film thickness on dielectric properties and tunability in polycrystalline <110> textured films exhibited strong thickness dependence in their elasto-dielectric properties. Tunability up to 45% was observed at moderate field levels (∼ 7 MV/m), while the Q-factors remained ≤40.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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Thickness and Strain Effects on RF/Microwave Properties of BST Thin Films on NdGaO3 Substrates
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Thickness and Strain Effects on RF/Microwave Properties of BST Thin Films on NdGaO3 Substrates
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