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Thermoelectric Properties of the cubic AgPb10SbTe12

Published online by Cambridge University Press:  01 February 2011

Kuei-Fang Hsu
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824, USA
Sim Loo
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Wei Chen
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA.
Ctirad Uher
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA.
Tim Hogan
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Mercouri G Kanatzidis
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824, USA
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Abstract

AgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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