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Thermoelectric Power of Bi And Bi1−xSbx Alloy Thin Films And Superlattices Grown by MBE

Published online by Cambridge University Press:  15 February 2011

Sunglae Cho
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Antonio DiVenere
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
George K. Wong
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
John B. Ketterson
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Jerry R. Meyer
Affiliation:
Code 5613, Naval Research Laboratory, Washington, D.C. 20375–5338
Craig A. Hoffmian
Affiliation:
Code 5613, Naval Research Laboratory, Washington, D.C. 20375–5338
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Abstract

We have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi1−xSbx alloy thin films and superlattices as a function of temperature in the range 20–300 K. We have observed that the TEP of a Bi thin film of 1 μm thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 Å and 800 Å Bi well thicknesses are enhanced over the bulk values. For x=0.072 and 0.088 in Bi1−xSbx thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi1−xSbx well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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Thermoelectric Power of Bi And Bi1−xSbx Alloy Thin Films And Superlattices Grown by MBE
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