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Thermal Strain Study of Almost Lattice-Matched Epitaxial InuGa1-uAs1-vP1-v Films on InP(100) Substrates

Published online by Cambridge University Press:  28 February 2011

G. Bai
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
S.-J. Kim
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R.G. Sobers
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.W. Lee
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. Brelvi
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
P.M. Thomas
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D.P. Wilt
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Single layers of ~ 0.5µm thick InuGa1-uAs1-vPv (0.52 < u < 0.63 and 0.03 < v < 0.16) were grown epitaxially on InP(100) substrates by liquid phase epitaxy at ~ 630°C. The compositions of the films were chosen to yield a constant banndgap of ~ 0.8 eV (λ = 1.55 µm) at room temperature. The lattice mismatch at room temperature between the epitaxial film and the substrate varies from - 4 × 10-3 to + 4 × 10-3. The strain in the films was characterized in air by x-ray double crystal diffractometry with a controllable heating stage from 23°C to ~ 700°C. All the samples have an almost coherent interfaces from 23°C to about ~ 330°C with the lattice mismatch accomodated mainly by the tetragonal distortion of the epitaxial films. In this temperature range, the x-ray strain in the growth direction increases linearly with temperature at a rate of (2.0 ± 0.4) × 10-6/°C and the strain state of the films is reversible. Once the samples are heated above ~ 300°C, a significant irreversible deterioration of the epitaxial films sets in.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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Thermal Strain Study of Almost Lattice-Matched Epitaxial InuGa1-uAs1-vP1-v Films on InP(100) Substrates
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Thermal Strain Study of Almost Lattice-Matched Epitaxial InuGa1-uAs1-vP1-v Films on InP(100) Substrates
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