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Thermal Stability of Reactively Sputtered TiN on InP as a Diffusion Barrier

Published online by Cambridge University Press:  25 February 2011

Zhengda Pang
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
Mohamed Boumerzoug
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
Roman V. Kruzelecky
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
Peter Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
John G. Simmons
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4M1.
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Abstract

The stability of rcactively sputtered TiN films on InP for application as a diffusion barrier has been examined using electrical measurements, Auger profiling and scanning electron microscopy (SEM). The samples were subjected to rapid-thermal-annealing (RTA) in a N2 atmosphere at temperatures between 400°C and 900°C. The SEM pictures of “as deposited” and RTA stoichiometric films show that the morphology is smooth, fine-grained and stable until 800°C. Auger depth profiling shows little interdiffusion between TiN and InP for RTA below 800°C. Annealing at temperatures of about 700°C reduces the sheet resistance of TiN relative to the “as-deposited” films by about 50%. Annealing at temperatures above 800°C results in a large sheet resistance. This may be associated with the deterioration of the TiN/InP morphology at high anneal temperatures as observed by SEM.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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