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Thermal Stability in the <Si>/TiSi2/TiN/Al Metallization System
Published online by Cambridge University Press: 25 February 2011
Abstract
Stability in the temperature range between 450°C and 525°C of reactively sputter deposited TiN and TiN formed simultaneously with TiSi2 using transient annealing has been investigated in the <Si>/TiSi2/TiN/Al metallization system.
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- Copyright © Materials Research Society 1989