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Thermal Plasma Physical Vapor Deposition of Nanostructured SiC Coatings

Published online by Cambridge University Press:  11 February 2011

Xinhua Wang
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Keisuke Eguchi
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Atsushi Yamamoto
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Toyonobu Yoshida
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
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Abstract

Nanostructured and thick SiC coatings have been successfully deposited on Si and graphite substrates by thermal plasma physical vapor deposition (TPPVD) using ultrafine SiC powder as a starting material. The control of processing parameters such as substrate temperature, composition of plasma gases, permits to the deposition of SiC coatings with a variety of microstructures and with various morphologies from dense to columnar. The maximum deposition rate reached 200 nm/s. Seebeck coefficient up to −480 μV/K was obtained for the non-doped coatings with stoichiometric composition. Nitrogen doping to the coatings made it possible to decrease the electrical resistivity from 10-2∼10-3 to 10-4∼10-5 Ωm and showing the maximum power factor of 1.0×10-3 Wm-1K-2 at 973 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Harris, G.L., in Properties of Silicon Carbide, edited by Harris, G.L. (INSPEC, London, 1995) p. 3.Google Scholar
2. Ishiyama, S., Fukaya, K. and Eto, M., Key Engineering Materials, 159–160, 423 (1999).Google Scholar
3. Kato, K., Asai, K., Okamoto, Y., Morimoto, J. and Miyakawa, T., J. Mater. Res. 14, 1752 (1999).Google Scholar
4. Yoshida, T., Tani, T., Nishimura, H. and Akashi, K., J. Appl. Phys. 54, 640 (1983).Google Scholar
5. Murakami, H., Yoshida, T. and Akashi, K., Advanced Ceramic Materials, 3, 423 (1988).Google Scholar