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Thermal Budget Reduction for Back-end Compatibility and Control of Resistance Switching Mechanism (Unipolar to Bipolar) in Pr1-xCaxMnO3 (PCMO) RRAM

Published online by Cambridge University Press:  20 March 2013

Neeraj Panwar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Gurudatt Rao
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai-400076, India.
N. Ravi Chandra Raju
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Rajashree Nori
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Pankaj Kumbhare
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Sanchit Deshmukh
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Senthil Srinivasan V S
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
N. Venkataramani
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai-400076, India.
Udayan Ganguly
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
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Abstract

A low thermal budget process for back-end compatible PCMO based RRAM cell is essential for 3D stacked memory. In this paper, we investigate two strategies to engineer low thermal budget processing for bipolar switching - (i) deposition engineering i.e. based on deposition temperature and oxygen partial pressure, (ii) post deposition anneal i.e. based on inert anneal of room temperature deposited PCMO film.. We demonstrate that both deposition and anneal shows a transition temperature above which bipolar switching is realized. Oxygen partial pressure is a key deposition process parameter. As oxygen partial pressure is reduced memory window increases, however beyond an optimal O2 partial pressure, unipolar switching is observed. Inert anneal is more effective in thermal budget reduction as N2/550°C/2min anneal has same memory performance as 650°C/2hour deposition process.

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Copyright
Copyright © Materials Research Society 2013

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References

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Thermal Budget Reduction for Back-end Compatibility and Control of Resistance Switching Mechanism (Unipolar to Bipolar) in Pr1-xCaxMnO3 (PCMO) RRAM
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Thermal Budget Reduction for Back-end Compatibility and Control of Resistance Switching Mechanism (Unipolar to Bipolar) in Pr1-xCaxMnO3 (PCMO) RRAM
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Thermal Budget Reduction for Back-end Compatibility and Control of Resistance Switching Mechanism (Unipolar to Bipolar) in Pr1-xCaxMnO3 (PCMO) RRAM
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