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Terahertz radiation from multiferroic BiFeO3 thin films as a new approach for ferroelectric memory readout and ferroelectric domain imaging microscopy

Published online by Cambridge University Press:  26 February 2011

Kouhei Takahashi
Affiliation:
ktakaha@ile.osaka-u.ac.jp, Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka, 565-0876, Japan
Noriaki Kida
Affiliation:
n-kida@aist.go.jp
Masayoshi Tonouchi
Affiliation:
tonouchi@ile.osaka-u.ac.jp
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Abstract

We have observed novel terahertz (THz) radiation characteristics of multiferroic BiFeO3 thin films upon illumination of femtosecond laser pulses. The radiated THz pulses from BiFeO3 thin films were shown to originate from an ultrafast modulation of spontaneous polarization, which was introduced by the photoexcited charge carriers. Based on our findings, we briefly present new approaches to nondestructive readout for nonvolatile memory devices and ferroelectric domain imaging microscopy using THz radiation as a sensitive probe.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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Terahertz radiation from multiferroic BiFeO3 thin films as a new approach for ferroelectric memory readout and ferroelectric domain imaging microscopy
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Terahertz radiation from multiferroic BiFeO3 thin films as a new approach for ferroelectric memory readout and ferroelectric domain imaging microscopy
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