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Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries
Published online by Cambridge University Press: 22 February 2011
Abstract
The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.
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- Copyright © Materials Research Society 1994
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