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Temperature Effects in Ion Beam Mixing of Oxide-Oxide Interfaces

Published online by Cambridge University Press:  28 February 2011

D. L. Joslin
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831.
L. J. Romana
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831.
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831.
C. J. McHargue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831.
P. A. Thévenard
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831.
L. L. Honon
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831.
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Abstract

Ion beam mixing of thin oxide films, Cr2O3 and ZiO2, on sapphire substrates has been studied. The systems were chosen according to their solubilities in α-Al2O3: Cr2O3 is completely soluble, while ZrO2 is insoluble. Mixing experiments were performed on 50 nm-thick Cr2O3 and ZrO2 films deposited on αAl2O3 by radio frequency (rf) sputter deposition. The specimens were bombarded with Cr+ at an energy of 160 keV to a fluence of 4×1016 ions-cm−2. Implantations were performed at 25 and 860°C. Rutherford backscattering spectroscopy was performed to analyze any interface modifications due to the bombardment. No detectable mixing was observed in either system for irradiations performed at 25°C, but a small amount of ballistic mixing was observed in both systems at 860°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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