Hostname: page-component-5d59c44645-ndqjc Total loading time: 0 Render date: 2024-03-03T22:43:06.973Z Has data issue: false hasContentIssue false

Temperature Distribution in InGaN-MQW LEDs Under Operation

Published online by Cambridge University Press:  03 September 2012

Veit Schwegler
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Matthias Seyboth
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Sven Schad
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Marcus Scherer
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Cristoph Kirchner
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Markus Kamp
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Ulrich Stempfle
Affiliation:
Dept. of Semiconductor Physics, University of Ulm, 89069 Ulm, Germany
Wolfgang Limmer
Affiliation:
Dept. of Semiconductor Physics, University of Ulm, 89069 Ulm, Germany
Rolf Sauer
Affiliation:
Dept. of Semiconductor Physics, University of Ulm, 89069 Ulm, Germany
Get access

Abstract

The temperature distribution in InGaN-MQW light emitting diodes was examined during operation with spatially resolved micro-Raman and micro-Electroluminescence measurements. The experimental results were compared to finite element simulations. A good agreement between the different experimental and calculated data is found. Maximum operation temperatures up to 140 °C at a moderate forward currents of 30 mA are revealed by all three independent methods. Influences of substrate thickness, different substrates, and even bond-wires are shown.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sugiura, L., J. Appl. Phys. 81, 1633, (1997).Google Scholar
2. Zolina, K.G., Kudryashov, V. E., Turkin, A.N., and Yunovich, A.E., Semiconductors 31, 901, (1997).Google Scholar
3. Yunovich, A.E., Kudryashov, V.E., Turkin, A.N., Kovalev, A.N., Manyakhin, F.I., MRS Internet J. Nitride Semic. Res. 4S1, G6.29 (1999).Google Scholar
4. Fischer, P., Christen, J., Zacharias, M., Schwegler, V., Kirchner, C., and Kamp, M., Appl. Phys. Lett. 75,. 3440 (1999).Google Scholar
5. Link, A., Bitzer, K., Limmer, W., Sauer, R., Kirchner, C., Schwegler, V., Kamp, M., Ebling, D.G., and Benz, K.W., J. Appl. Phys. 86, 6256, (1999).Google Scholar