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Temperature Dependence of Bound Exciton Emissions in GaN

Published online by Cambridge University Press:  15 February 2011

D. G. Chtchekine
Affiliation:
Physics Department, Emory University, Atlanta, GA 30322
G. D. Gilliland
Affiliation:
Physics Department, Emory University, Atlanta, GA 30322
Z. C. Feng
Affiliation:
Institute of Material Research and Engineering, Singapore, 119260
S. J. Chua
Affiliation:
Institute of Material Research and Engineering, Singapore, 119260
D. J. Wolford
Affiliation:
Physics Department and Microelectronics Research Center, Iowa State University, Ames, IA 50011
S. E. Ralph
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332
M. J. Schurman
Affiliation:
Emcore Corporation, Somerset, NJ 08873
I. Ferguson
Affiliation:
Emcore Corporation, Somerset, NJ 08873
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Abstract

The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K) is found to be dominated by the release of a free exciton with thermal activation energy consistent with the exciton localization energy. At higher temperatures a second dissociation channel with activation energy EA = 28 ± 2 meV is observed. The dissociation of a bound exciton complex with exciton localization energy Ex loc = 11.7 meV is also dominated by the release of a free exciton. In contrast to previous studies evidence is presented against the hypothesis of this emission being due to the exciton bound to an ionized donor. We find that it originates most likely from an exciton bound to a neutral acceptor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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