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TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization

Published online by Cambridge University Press:  21 February 2011

Chang Woo Lee
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, 305-701, Taejon, Korea
Yong Tae Kim
Affiliation:
Korea Institute of Science and Technology, Semiconductor Materials Laboratory, P. O. Box 131, Cheongryang, Seoul, Korea
Suk-Ki Min
Affiliation:
Korea Institute of Science and Technology, Semiconductor Materials Laboratory, P. O. Box 131, Cheongryang, Seoul, Korea
Choochon Lee
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology, 305-701, Taejon, Korea
Jeong Yong Lee
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 305-701, Taejon, Korea
Young Wook Park
Affiliation:
Samsung Electronics Co., Research and Development Center, Kihung, Korea
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Abstract

Plasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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