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Tem Characterization of Highly Oriented Diamond Films on (001) Silicon Synthesized by Bias Enhanced Nucleation Technique

Published online by Cambridge University Press:  10 February 2011

Seung-Joon Jeon
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, USA
Arun Kumar Chawla
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, USA
Young-Joon Baik
Affiliation:
Korea Institute of Science and Technology, Seoul, KOREA
Changmo Sung
Affiliation:
Center for Advanced Materials, University of Massachusetts, Lowell, USA
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Abstract

Highly oriented diamond films were deposited on a (001) silicon substrate by bias enhanced MPCVD technique. Three-dimensional TEM characterizations were carried out to understand the nucleation and growth mechanism of diamond grains. The surface morphology, defects, and misorientations of diamond films were compared as a function of synthesizing temperatures and thickness of the films. From our experimental results the texture formation mechanism of diamond films is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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Tem Characterization of Highly Oriented Diamond Films on (001) Silicon Synthesized by Bias Enhanced Nucleation Technique
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