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Technique of surface control with the Electrolyzed D.I.water for post CMP cleaning

Published online by Cambridge University Press:  14 March 2011

Mitsuhiko Shirakashi
Affiliation:
Precision Machinery Group, Ebara Corporation 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Kanagawa, Japan
Kenya Itoh
Affiliation:
Precision Machinery Group, Ebara Corporation 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Kanagawa, Japan
Ichiro Katakabe
Affiliation:
Precision Machinery Group, Ebara Corporation 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Kanagawa, Japan
Masayuki Kamezawa
Affiliation:
Precision Machinery Group, Ebara Corporation 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Kanagawa, Japan
Sachiko Kihara
Affiliation:
Precision Machinery Group, Ebara Corporation 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Kanagawa, Japan
Manabu Tsujimura
Affiliation:
Precision Machinery Group, Ebara Corporation 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Kanagawa, Japan
Takayuki Saitoh
Affiliation:
Center of Technology Development, Ebara Research CO., Ltd. 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Kanagawa, Japan
Kaoru Yamada
Affiliation:
Center of Technology Development, Ebara Research CO., Ltd. 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Kanagawa, Japan
Naoto Miyashita
Affiliation:
Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Kanagawa, Japan
Masako Kodera
Affiliation:
Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Kanagawa, Japan
Yoshitaka Matsui
Affiliation:
Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Kanagawa, Japan
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Abstract

Chemical mechanical planarization (CMP) has been widely used for planarization of ILD, STI, plug and wiring processes. Wafer has several surfaces of materials, such as wiring materials, barrier materials, dielectric materials etc., that must be cleaned at the same time. In post metal CMP cleaning processes, in addition to cleaning several surfaces, it is very important that the oxidization level of metal materials, such as wiring, is held and controlled to maintain its resistance. Especially copper, that is began to use for wiring, is very easy to be oxidized. We have confirmed that the Electrolyzed D.I.water is effective in post Cu CMP cleaning for controlling the surface condition of Cu during cleaning and leaving a robust surface after CMP. We describe the Electrolyzed D.I.water system and present some result of analysis of Cu surface by treated with the Electrolyzed D.I.water.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

[1] Miyashita, N., Mase, Y., Takayasu, J., Minami, Y., Kodera, M., Abe, M., Izumi, T.: ”Mechanism of a New Post CMP Cleaning for Trench Isolation Process”, Materials Research Society 1999 Spring Meeting, San Francisco, CA, April 1999.Google Scholar
[2] Briggs, D., Seah, M.P.: ”Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy”, John Wiley & Sons Ltd. Google Scholar
[3] The surface science society of Japan: ”Method of X-ray Photoelectron Spectroscopy”, MaruzenGoogle Scholar

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