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Synthesis and Properties of GaxMn1-xN films
Published online by Cambridge University Press: 01 February 2011
Abstratct:
Mn-doped GaN films were grown by hydride vapor phase epitaxy(HVPE). structural measurements show that Mn may substitute Ga atoms in the GaN lattice. Ferromagnetism is observed in these HVPE grown Mn-doped GaN films, which may come from the GaxMn1−xN phase in the films.
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- Copyright © Materials Research Society 2005