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Synthesis and Properties of Barium Titanate Thin Films Deposited on Copper Foil Substrates

Published online by Cambridge University Press:  26 February 2011

Jon Ihlefeld
Affiliation:
jfihlefe@unity.ncsu.edu, North Carolina State University, 1001 Capability Drive, Rm. 324 Research Building I, Campus Box 7917, Raleigh, North Carolina, 27606, United States
William Borland
Affiliation:
william.j.borland-1@usa.dupont.com, DuPont Electronic Technologies
Jon-Paul Maria
Affiliation:
jpmaria@ncsu.edu, North Carolina State University, Materials Science and Engineering
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Abstract

Barium titanate thin films have been deposited on copper foils in the absence of interfacial layers via a chemical solution process. The dielectric – base metal stacks have been processed in reductive atmospheres such that substrate oxidation is avoided while allowing the perovskite film phase to crystallize. This accomplishment has facilitated the pursuit of a new embedded capacitor technology offering compatibility with polymer printed wiring boards and capacitance densities in excess of 2.5 µF/cm2. This represents a distinct improvement beyond conventional foil-based capacitor strategies. Finally, two critical phenomena will be discussed: (1) the effect of grain size on the dielectric properties of barium titanate thin films and (2) the effect of the B-site substituent Zr on the lattice, microstructure, and dielectric properties. Most importantly, high processing temperatures have allowed for microstructural and dielectric properties similar to well-prepared bulk ceramics, including average grain diameters greater than 0.1 µm, relative permittivities in excess of 2000, and coercive fields below 10 kV/cm. These properties will be discussed in the context of bulk ceramic and thin film reference data and with regard to integration into printed wiring boards.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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Synthesis and Properties of Barium Titanate Thin Films Deposited on Copper Foil Substrates
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