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Synchrotron x-Ray Topographic Study Of Dislocations In Gaas Detector Crystals Grown By Vertical Gradient Freeze Technique

Published online by Cambridge University Press:  10 February 2011

T. Tuomi
Affiliation:
Optoclectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 Hut, Finland
M. Juvonen
Affiliation:
Optoclectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 Hut, Finland
R. Rantamäki
Affiliation:
Optoclectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 Hut, Finland
K. Hjelt
Affiliation:
Optoclectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 Hut, Finland
M. Bavdaz
Affiliation:
Space Science Department, European Space Agency, P.O. Box 229, NL-2200AG Noordwiijk, The Netherlands
S. Nenonen
Affiliation:
Metorex International Oy, P.O. Box 85, FIN-02631 Espoo, FINLAND
M -A. Gagliardi
Affiliation:
Metorex International Oy, P.O. Box 85, FIN-02631 Espoo, FINLAND
P. J. Mcnally
Affiliation:
Microelectronics Research Laboratory, Dublin City University, Dublin 9, IRELAND
A. N. Danilewsky
Affiliation:
Kristallographisches Institut, Universität Freiburg, D-79104 Freiburg, GERMANY
E. Prieur
Affiliation:
Okmetic Ltd., P.O. Box 44, FIN-02631 Espoo, FINLAND
M. Taskinen
Affiliation:
Okmetic Ltd., P.O. Box 44, FIN-02631 Espoo, FINLAND
M. Tuominen
Affiliation:
Okmetic Ltd., P.O. Box 44, FIN-02631 Espoo, FINLAND
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Abstract

Large area transmission and section topographs of semi-insulating gallium arsenide wafers grown by the gradient freeze technique are made with synchrotron radiation at HASYLAB in Hamburg and at ESRF in Grenoble. Several high-resolution images including stereo pairs are obtained on the same film at a time. A typical dislocation line is an arc of a circle which starts from one surface and ends at the same surface. From the disappearance of the dislocation image and using the g · b = 0 criterion it is concluded that the Burgers vector b of the most common dislocations is parallel to 〈110〉. Rather large volumes of the wafer are dislocation-free. Section topographs of epitaxial wafers show defects and strain fields at the interface between an n-type substrate and the epitaxial layers grown by chemical vapor deposition. The results are compared with those obtained from detector performance measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. McGregor, D.S. and Kammeraad, J.E. in Semiconductors for Room Tempetarure Nuclear Detector Applications, edited by Schlesinger, T.E. and James, Ralph B., (Semiconductors and Semimetals 43, Academic Press, San Diego, CA, 1995) pp. 383442 Google Scholar
2. Tuomi, T., Naukkarinen, K. and Rabe, P., phys. stat. sol. (a) 25, 93 (1974)CrossRefGoogle Scholar
3. Prieur, E., Tuomi, T., Partanen, J., Yli-Juuti, E. and Tilli, M., J. Crystal Growth 132, 599605 (1993)CrossRefGoogle Scholar
4. Kaganer, V.M. and Möhling, W., phys. stat. sol. (a) 123, 379392 (1991)CrossRefGoogle Scholar

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Synchrotron x-Ray Topographic Study Of Dislocations In Gaas Detector Crystals Grown By Vertical Gradient Freeze Technique
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