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A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices

Published online by Cambridge University Press:  29 June 2011

S.M. Bishop
Affiliation:
College of Nanoscale Science and Engineering, University at Albany (SUNY), Albany, NY 12203, U.S.A.
B.D. Briggs
Affiliation:
College of Nanoscale Science and Engineering, University at Albany (SUNY), Albany, NY 12203, U.S.A.
K.D. Leedy
Affiliation:
Air Force Research Laboratory, 2241 Avionics Circle, Dayton, OH, 45433, U.S.A.
S. Addepalli
Affiliation:
College of Nanoscale Science and Engineering, University at Albany (SUNY), Albany, NY 12203, U.S.A.
N.C. Cady
Affiliation:
College of Nanoscale Science and Engineering, University at Albany (SUNY), Albany, NY 12203, U.S.A.
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Abstract

Metal-insulator-metal (MIM) resistive switching devices are being pursued for a number of applications, including non-volatile memory and high density/low power computing. Reported resistive switching devices vary greatly in the choice of metal oxide and electrode material. Importantly, the choice of both the metal oxide and electrode material can have significant impact on device performance, their ability to switch, and the mode of switching (unipolar, bipolar, nonpolar) that results. In this study, three metal oxides (Cu2O, HfOx, and TiOx) were deposited onto copper bottom electrodes (BEs). Four different top electrode (TE) materials (Ni, Au, Al, and Pt) were then fabricated on the various metal oxides to form MIM structures. Devices were then characterized electrically to determine switching performance and behavior. Our results show that the metal TE plays a large role in determining whether or not the MIM structure will switch resistively and what mode of switching (unipolar, bipolar, or non-polar) is observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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