Hostname: page-component-7479d7b7d-pfhbr Total loading time: 0 Render date: 2024-07-12T20:29:04.242Z Has data issue: false hasContentIssue false

Surface-Oriented Oxygen Mass Transport During Implantation

Published online by Cambridge University Press:  26 February 2011

A. B. Danilin
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia.
L. A. Charnyi
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia.
A. W. Nemirovski
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia. Moscow Steel and Alloys Institute, 4, Leninsky Prospekt, 117936 Moscow, Russia.
V. V. Saraikin
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia.
Get access


The effect of implantation conditions on the localization of oxygen implanted with substoichiometric doses has been studied. Oxygen ions were implanted into Si wafers coated with a thin oxide film, which was etched off after the implantation. We used various implantation modes. After the implantation, the specimens were studied using SIMS and X-ray diffractometry. The concentration profiles suggest that at the lower implantation temperature, part of oxygen migrates toward the Si-SiO2 interface. The effect does not refer to the usual enhancement of SIMS signal at the surface because the concentration peak is at a depth of about 25 nm. Calculated deformation profiles indicate a compression at the same depth, the effect being the strongest for the low current density. The result suggests that the superficial layer is rich in vacancial-type defects. The coincidence of the deformation and oxygen concentration maxima leads to the conclusion that oxygen migrates toward the surface in the form of A-centers. A similar phenomenon has been observed for sequential low-temperature implantation of oxygen and nitrogen.

Research Article
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)


1. Danilin, A.B., Malinin, A.A., Mordkovich, V.N., Saraikin, V.V., and Vyletalina, O.I., Nucl. Instr. and Meth. in Phys. Res. B82, 431 (1993).Google Scholar
2. Physical Processes in Irradiated Semiconductors, edited by Smirnov, L.S. (Nauka, Novosibirsk, 1977), p. 256 (in Russian).Google Scholar
3. Sumino, K., 2nd Inter. Autumn Meeting Proc. Gettering and Defect Engineering in Semiconductor Technology (GADEST 87), Garzau, Germany, 1987 (Akad. Weisenchaften DDR, Frankfurt (Oder), 1987), p. 218.Google Scholar
4. Afanas, A.M.’ev, Aleksandrov, P.A., and Imamov, R.M., X-Ray Diagnostics of Superficial Layers (Nauka, Moscow, 1986), p. 96 (in Russian).Google Scholar
5. Zaumzeil, P. and Winter, V., Phys. Status Solidi A120, 67 (1990).Google Scholar
6. Scherbachev, K.D., Private communication (1992).Google Scholar
7. Akasaka, Y., Yoneda, K., Sakurai, T., Nishi, H., Kawabe, S. and Tohi, A., J. Appl. Phys., 44, 1 (1973) 220.Google Scholar
8. Gerasimov, A.I., Zorin, E.I., Pavlov, P.V., and Tetelboum, D.I., Ibid. A12, 679 (1992).Google Scholar
9. Crowder, B., Ion Implantation in Semiconductors, Proc. US-Japan Seminar, edited by Namba, S. (Kyoto, 1973), p. 63.Google Scholar
10. Abroyan, I.A. and Titov, A.I., in Proceedings of 2nd USA-USSR Seminar on Ion Implantation, July 9–11, 1979, Puschino, edited by Vavilov, V.S. and Smirnov, L.S. ( Inst. Semicond. Phys., Siberian Branch of Russian Acad. Sci., Novosibirsk, 1979), p. 335.Google Scholar
11. Freeman, J.H., Chivers, D.J., Gard, G.A., Hinder, G.W., Smith, B.J., and Stephen, J., in Ion Implantation in Semiconductors, edited by Namba, S. (Plenum Press, New York, 1975), p. 55.Google Scholar
12. Vedono, A. and Tanigawa, S., Defect Control in Semiconductors, edited by Sumino, K. (Elsevier Science Publishers B.V., North-Holland, 1990), p. 495.Google Scholar
13. Tipping, A.K., Newman, R.C., Newton, D.C., and Tucker, J.H., Meter. Sci. Forum 10 /12, pt. III, 887892 (1986).Google Scholar
14. Reeson, K.J., Marsh, C.D., Chater, R.J., Kilner, J.A., Robinson, A.K., Christensen, K.N., Hemment, P.L.F., Harbbeke, G., Stigmeier, E.F., Booker, G.R., and Celler, G.K., Microelectronics Engineering 8 (3/4), 163 (1988).Google Scholar