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Surface-Oriented Oxygen Mass Transport During Implantation

Published online by Cambridge University Press:  26 February 2011

A. B. Danilin
Affiliation:
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia.
L. A. Charnyi
Affiliation:
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia.
A. W. Nemirovski
Affiliation:
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia. Moscow Steel and Alloys Institute, 4, Leninsky Prospekt, 117936 Moscow, Russia.
V. V. Saraikin
Affiliation:
Centre for Analysis of Substances, 9, Elektrodnaya St., 111524 Moscow, Russia.
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Abstract

The effect of implantation conditions on the localization of oxygen implanted with substoichiometric doses has been studied. Oxygen ions were implanted into Si wafers coated with a thin oxide film, which was etched off after the implantation. We used various implantation modes. After the implantation, the specimens were studied using SIMS and X-ray diffractometry. The concentration profiles suggest that at the lower implantation temperature, part of oxygen migrates toward the Si-SiO2 interface. The effect does not refer to the usual enhancement of SIMS signal at the surface because the concentration peak is at a depth of about 25 nm. Calculated deformation profiles indicate a compression at the same depth, the effect being the strongest for the low current density. The result suggests that the superficial layer is rich in vacancial-type defects. The coincidence of the deformation and oxygen concentration maxima leads to the conclusion that oxygen migrates toward the surface in the form of A-centers. A similar phenomenon has been observed for sequential low-temperature implantation of oxygen and nitrogen.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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