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Surface Reconstruction and Morphology of Hydrogen Sulfide Treated GaAs (001) Substrate

Published online by Cambridge University Press:  03 September 2012

Jun Suda
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan, suda@kuee.kyoto-u.ac.jp
Yoichi Kawakami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan, suda@kuee.kyoto-u.ac.jp
Shizuo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan, suda@kuee.kyoto-u.ac.jp
Shigeo Fujita
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-01, Japan, suda@kuee.kyoto-u.ac.jp
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Abstract

We report several new results in hydrogen sulfide (H2S) treatment of a GaAs (001) substrate. Surface reconstruction and morphology were investigated by in situ reflection high energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM) in terms of the annealing temperature and the H2S irradiation sequence. A (4 × 3) GaAs surface was obtained by annealing the substrate under H2S irradiation (4 × 10-7 Torr). The surface was atomically flat, i.e., large terraces with monolayer steps were clearly observed. A (2 × 6) S-terminated GaAs surface was obtained by irradiation H2S at 300°C on a Ga-terminated surface, which was formed by annealing at 580°C in high vacuum. The molecular beam epitaxy (MBE) growth of ZnSSe-based semiconductors on the (4 × 3) surface results in high quality structures such as a novel ZnSSe/ZnMgSSe tensile-strained quantum well (QW).

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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