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Surface Morphology of Ingap in the Ai-Free Pump Ld

Published online by Cambridge University Press:  15 February 2011

Ahn Goo Choo
Affiliation:
Photonics Lab, Material Sector, Samsung Advanced Institute of Technology, Suwon, P. O. Box 111, South Korea
Seong Heon Kim
Affiliation:
Photonics Lab, Material Sector, Samsung Advanced Institute of Technology, Suwon, P. O. Box 111, South Korea
Nam Heon Kim
Affiliation:
Photonics Lab, Material Sector, Samsung Advanced Institute of Technology, Suwon, P. O. Box 111, South Korea
Oleg Laboutine
Affiliation:
Photonics Lab, Material Sector, Samsung Advanced Institute of Technology, Suwon, P. O. Box 111, South Korea
Joon Sang Yu
Affiliation:
Photonics Lab, Material Sector, Samsung Advanced Institute of Technology, Suwon, P. O. Box 111, South Korea
Tae Il Kim
Affiliation:
Photonics Lab, Material Sector, Samsung Advanced Institute of Technology, Suwon, P. O. Box 111, South Korea
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Abstract

We have studied the effects of growth parameters and substrate orientations on InGaP quality using Normarski microscopy, photoluminescence (PL) spectrum and atomic force microscopy (AFM). The full width at half maximum (FWHNM) and peak position of PL spectrum were closely related with the surface morphology. The InGaP layers of narrower FWHM and shorter peak wavelength had smoother surface morphology. The InGaP layers grown on (100) substrates at the moderately low reactor pressure showed rougher surface than those on the tilted substrates. But the surface morphology was noticeably improved to be mirror-like at the lower reactor pressure. The surface morphology was inverted between the exact and tilted substrates in this reactor pressure. Furthermore, the samples grown on the tilted substrate exhibited rougher surface than the samples grown on the exact substrate. (111)B-misoriented growth surfaces had smoother than (111)A-misoriented surfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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