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Surface Charging of n-type Gd2O3 and HfO2 thin Films

Published online by Cambridge University Press:  01 February 2011

David Wooten
Affiliation:
dwooten@afit.edu, Air Force Institute of Technology, Engineering Physics, Dayton, Ohio, United States
Ya. B. Losovyj
Affiliation:
ylosovyj@lsu.edu, Louisiana State University, Center for Advanced Microstructures and Devices, Baton Rouge, Louisiana, United States
J. Petrosky
Affiliation:
james.petrosky@afit.edu, Air Force Institute of Technology, Engineering Physics, Dayton, Ohio, United States
J. McClory
Affiliation:
John.McClory@afit.edu, Air Force Institute of Technology, Engineering Physics, Dayton, Ohio, United States
Jinke Tang
Affiliation:
jtang2@uwyo.edu, University of Wyoming, Physics and Astronomy, Laramie, Wyoming, United States
Wendong Wang
Affiliation:
wwang@uwyo.edu, University of Wyoming, Physics and Astronomy, Laramie, Wyoming, United States
Peter A. Dowben
Affiliation:
pdowben@unl.edu, University of Nebraska-Lincoln, Physics and Astronomy and the Nebraska Center for Materials and Nanoscience, Lincoln, Nebraska, United States
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Abstract

Gd2O3 and HfO2 films exhibit photovoltaic charging that depends on temperature. The dielectric properties of the surface and concomitant photovoltaic surface charging increases following oxygen exposure under ultrahigh vacuum conditions suggesting that the surface conductivity plays a role in the surface photovoltage charging.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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