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Suppression of Parasitic BJT Action in Single Pocket Thin Film Deep Sub-Micron SOI MOSFETs.

Published online by Cambridge University Press:  01 February 2011

Najeeb-ud-Din
Affiliation:
Electrical Engineering Department Indian Institute of Technology, Bombay, Powai, Mumbai - 400 076, India
Aatish K. Mohan
Affiliation:
Electrical Engineering Department Indian Institute of Technology, Bombay, Powai, Mumbai - 400 076, India
V. Dunga
Affiliation:
Electrical Engineering Department Indian Institute of Technology, Bombay, Powai, Mumbai - 400 076, India
V. Ramgopal Rao
Affiliation:
Electrical Engineering Department Indian Institute of Technology, Bombay, Powai, Mumbai - 400 076, India
J. Vasi
Affiliation:
Electrical Engineering Department Indian Institute of Technology, Bombay, Powai, Mumbai - 400 076, India
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Abstract

A study of parasitic bipolar junction transistor effects in single pocket thin film siliconon-insulators (SOI) nMOSFETs has been carried out. Characterization and simulation results show that parasitic bipolar junction transistor action is reduced in single pocket SOI MOSFETs in comparison to homogeneously doped conventional SOI MOSFETs. A novel Gate-Induced-Drain-Leakage (GIDL) current technique was used to characterize the SOI MOSFETs. 2 - D simulations were carried out to analyze the reduced parasitic bipolar junction effect in single pocket thin film SOI MOSFETs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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Suppression of Parasitic BJT Action in Single Pocket Thin Film Deep Sub-Micron SOI MOSFETs.
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