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Subsurface Damage Characterization of Hydrogen Ion Implanted Silicon Wafer with Uv/Millimeter-Wave Technique

Published online by Cambridge University Press:  10 February 2011

Yoh-Ichiro Ogita
Affiliation:
Kanagawa Institute of Technology, Dept. Electrical & Electronic Engg, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243–0292, Japan
Ken-Ichi Kobayashi
Affiliation:
Kanagawa Institute of Technology, Dept. Electrical & Electronic Engg, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243–0292, Japan
Masaki Kurokawa
Affiliation:
Kanagawa Institute of Technology, Dept. Electrical & Electronic Engg, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243–0292, Japan
Hideyuki Kondo
Affiliation:
Mitsubishi Materials Corp., Silicon Research Center, 1–297 Kitabukuroxho, Omiya, Saitama, 330–8508, JAPAN
Takeo Katoh
Affiliation:
Kanagawa Institute of Technology, Dept. Electrical & Electronic Engg, 1030 Shimo-Ogino, Atsugi, Kanagawa, 243–0292, Japan
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Abstract

The UV/mm-wave technique composed of ultraviolet photoexcitation and millimeter wave probe was examined with photoconductivity amplitude (PCA) to characterize the slight subsurface damage induced by implanting H2+ ion into the subsurface at sub micron depth of Si wafers. The identical samples were also characterized using pulse photoconductivity amplitude (PPCA) obtained by another technique which is specified by blue laser photoexcitation and microwave probe. PCA decreased with increase of ion dose, which coincided well with the result in PPCA. PPCA decreased with increase of implantation energy as 90 to 120 keV, but PCA increased at 120keV. Both PCA and PPCA well reflected the damage at sub micron depth. PCA reflected damage in shallower depth compared to PPCA.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERNCES

1. Ogita, Y., Semicond, Sci. Tech., 7, 1, pp. A175–179 (1992).Google Scholar
2. Ogita, Y., Hosoda, Y., and Miyazaki, M., in Science and Technology of Semiconductor Surface Preparation, edited by Higashi, G.S., Hirose, M., Raghavan, S., and Verhaverbeke, S., (Materials Research Society, 477, Warrendale, PA, 1997), pp. 209214.Google Scholar
3. Ogita, Y., Tate, N., Masumura, H., Miyazaki, M., and Yakushiji, K., in Recombination Lifetime Measurements in Silicon, edited by Guputa, D. C., Bacher, F.R., and Hughes, W. M., (ASTM, STP 1340, West Conshohocken, PA, 1998), pp. 168182.Google Scholar
4. Ogita, Y., Nakano, M., and Masumura, H., in Defect and Impurity Engineered Semiconductors and Devices, edited by Ashok, S., Chevsllier, J., Akasaki, I., Johnson, M. M., and Sopori, B. L., (Materials Research Society, 378, Warrendale, PA, 1995), pp. 591596.Google Scholar
5. Ogita, Y., Kobayashi, K., Daio, H., J. Crystal Growth, 210 pp. 3639(2000)Google Scholar
6. Katoh, T., Kondo, H., Takaishi, K., Tominaga, M., Ogita, Y., Kobayashi, K. and Gan-nen, Y., in Extended Abstracts of the 59th Fall Meeting, The Japan Society of Appl. Phys., (The Japan Society of Applied Physics, No. 2, Tokyo, 1998) P. 690 Google Scholar
7. Ogita, Y., Shinohara, H., Sawanobori, T., and Kurokawa, M., in In-Line Characterization Technique for Performance and Yield Enhancement in Microelectronic Manufacturing II (The International Society for Optical Engineering (SPIE), 3509, Bellingham, WA, 1998), pp. 65–7Google Scholar
8. Ogita, Y. and Kawasaki, K. in Extended Abstracts of the 46th Spring Meeting, The Japan Society of Applied Physics, (The Japan Society of Applied Physics, No. 2, Tokyo, 1999), p. 824 Google Scholar