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Sublimation Sandwich Growth of Free Standing GaN Crystals

Published online by Cambridge University Press:  10 February 2011

Yu. A. Vodakov
Affiliation:
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
E. N. Mokhov
Affiliation:
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
M. G. Ramm
Affiliation:
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
M. S. Ramm
Affiliation:
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
A. D. Roenkov
Affiliation:
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
A. G. Ostroumov
Affiliation:
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
A. A. Wolfson
Affiliation:
A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
S. Yu. Karpov
Affiliation:
Advanced Technical Center, P.O.Box 160, 198103 St.Peterburgs Russia
Yu. N. Makarov
Affiliation:
Fluid Mechanics Department University of Erlangen-Nürnberg, Cauerstrasse 4, D-91058 Erlangen, Germany, yuri@lstm.uni-erlangen.de
H. Jürgensen
Affiliation:
+AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany
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Abstract

Thick epitaxial layers of GaN on SiC and sapphire are grown by using the sublimation sandwich method. It is shown that growth of good quality GaN crystals with the growth rates up to 0.5 mm/hour is possible using this technique. The grown layers have been separated from the seed and free standing GaN crystals up to 15 mm size were obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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