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Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

Published online by Cambridge University Press:  21 March 2011

S. Nishino
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN +81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
T. Nishiguchi
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN +81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
Y. Masuda
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN +81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
M. Sasaki
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN +81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
S. Ohshima
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN +81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
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Abstract

Sublimation growth of 6H-SiC was performed on {1100} and {1120} substrates. The difference between the growth on {1100} plane and {1120} plane was observed. {1100} facet was almost flat and there were grooves oriented toward <1120> direction. The step bunching was observed on {1100} plane 5° off-axis. A lot of pits were introduced on {1120} plane of the crystal grown both on {1100} and {1120} substrates. Step flow growth toward <1120> direction created the pits on {1120} plane. It was important to grow crystal by layer by layer growth on {1120} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {1120} plane may be reduced as same as CVD growth on {1120} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

[1] Yano, H., Hirao, T., Kimoto, T. and Matsunami, H., Jpn. J. Appl. Phys. 39, 2008 (2000)CrossRefGoogle Scholar
[2] Nishino, S., Kojima, Y., and Saraie, J., in “Amorphous and Crystalline Silicon Carbide 3” (Springer-Verlag), 15 (1992)Google Scholar
[3] Takahashi, J. and Ohtani, N., phys. stat. sol. (b) 202, 163 (1997)3.0.CO;2-1>CrossRefGoogle Scholar
[4] Nishino, S., Masuda, Y., Ohshima, S. and Jacob, C., in this volume.Google Scholar
[5] Kimoto, T., Yamamoto, T., Chen, Z.Y., Yano, H. and Matsunami, H., Mat. Sci. Forum 338–342, 189 (2000)CrossRefGoogle Scholar

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Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates
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