Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-16T15:40:14.763Z Has data issue: false hasContentIssue false

A Study on the Strain and Microstructure in SiGe Film Grown on Si(001) Substrate by MBE

Published online by Cambridge University Press:  21 February 2011

Kyoung-Ik Cho
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Sahn Nahm
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Sang-Gi Kim
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Seung-Chang Lee
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Kyung-Soo Kim
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Sin-Chong Park
Affiliation:
Electronics & Telecommunications Research Institute, Semiconductor Div. Yusong P.O. Box 106, Taejon, 305–600, Korea
Get access

Abstract

Si/Si0.8Ge0.2/Si(001) structures were grown at various growth temperatures (250 ∼ 760 °C) using molecular beam epitaxy, and the variation of strain and microstructure of the film was investigated using double crystal X-ray diffractometry and transmission electron microscopy. SiGe films with good single crystallinity were obtained at the growth temperatures of 440 ∼ 600 °C. For the samples grown below 350 °C, an amorphous SiGe film was developed over the SiGe single crystalline layer with a jagged amorphous/crystalline (a/c) interface, and many defects such as stacking faults and microtwins were formed below the a/c interface. Dislocations were developed through out the films for the samples grown above 680 °C. In addition, for the samples grown below 680 °C, the amount of in-plane strain of the SiGe film was found to be about − 8×l0−3 without strain relaxation. However, the SiGe films grown at 760 °C have small in-plain strain of − 4×l0−3 and large strain relaxation of 50%.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. King, C.A., Hoyt, J.L., Gronet, C.M., Gibbons, J.F., Scott, M.P., and Turner, J., IEEE ED Lett. 10(2), 52(1989).Google Scholar
2. Bean, J.C., Proc. IEEE 80, 571(1992).Google Scholar
3. Lee, S.C., Lee, J.Y., Yun, S.J., and Park, S.C., presented at the 8th Int’l. Conf. on MBE, Osaka, Japan, 1994.Google Scholar
4. Materials Aspects of GaAs and InP Based Structures, edited by Swaminathan, V. and Macrander, A.T. (Prentice Hall, New Jersey, 1991), pp. 181216.Google Scholar
5. Eaglesham, D.J., Gossmann, H.-J., and Cerullo, M., Phys. Rev. Lett. 65, 1227 (1990).Google Scholar
6. Smith, D.L., Chen, C.-C., Anderson, G.B., and Hagstrom, S.B., Appl. Phys. Lett. 62, 570 (1993).Google Scholar