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A Study on the Selective Nucleations for Formation of Large Single Grains in PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

Jang-Sik Lee
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
Eung-Chul Park
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
Jung-Ho Park
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
Byung-Il Lee
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
Seung-Ki Joo
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
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Abstract

Selective nucleation and lateral growing method have been developed for high quality ferroelectric PZT(65/35) thin films using perovskite-phase PZT island seed. The PZT films on PZT seed island were transformed into the perovskite phase at temperatures as low as 540°C, which is 150°C lower than compared to that of PZT thin films deposited on Pt films. The temperature difference enables lateral growth without undesirable random nucleation. Maximum grain sizes of the perovskite-phase PZT films were determined by the annealing temperature. The PZT thin films show a leakage current density of 8×10−8 A/cm2, breakdown field of 1240 kV/cm, saturation polarization of 42 μC/cm2, and remanent polarization of 30 μC/cm2, whose values were maintained up to 2×1011 cycles. In this study, we show that when there was no grain boundary in the area measured, degradation such as fatigue and retention was not observed even with Pt electrodes. So the main source of degradation is the grain boundary in the PZT thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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