Skip to main content Accessibility help
×
Home
Hostname: page-component-cf9d5c678-h2mp8 Total loading time: 0.158 Render date: 2021-07-28T02:01:04.276Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process

Published online by Cambridge University Press:  21 March 2011

Hidekazu Sato
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN. hidekazu-s@jp.fujitsu.com
Takae Sukegawa
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Toshifumi Mori
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Kousuke Suzuki
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Haruhisa Mori
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Corresponding
E-mail address:
Get access

Abstract

This paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi2) formation. Particularly, we investigate the relationship between sheet resistance of CoSi2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi2/poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hu, G. J. and Bruce, R. H., IEEE Trans Electron Devices, vol. 32, No. 3, pp 584(1985).CrossRefGoogle Scholar
2. Hao, M., Nayak, D. and Rakkhit, R., IEEE Electron Device Lett., vol. 18, No. 5, pp 215 (1997).Google Scholar
3. Yu, B., Ju, D. H., Kepler, N., King, T.J. and Hu, C., Symp. on VLSI Tech., pp 105 (1997).Google Scholar
4. Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P.H., Stolk, P. A. and Gravesteijn, D. J., IEDM Tech. Dig., pp 829 (1997).Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *