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A Study on the Metal Induced Lateral Crystallization Behavior of Amorphous Silicon Thin Films

Published online by Cambridge University Press:  10 February 2011

Byung-Il Lee
Affiliation:
Division of MS & E, College of Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, Korea
Kwang-Ho Kim
Affiliation:
Division of MS & E, College of Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, Korea
Won-Cheol Jeong
Affiliation:
Division of MS & E, College of Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, Korea
Pyung-Su Ahn
Affiliation:
Division of MS & E, College of Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, Korea
Jin-Wook Shin
Affiliation:
Division of MS & E, College of Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, Korea
Seung-Ki Joo
Affiliation:
Division of MS & E, College of Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-Ku, Seoul, Korea
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Abstract

Basic mechanisms for both Ni- and Pd-metal induced lateral crystallization (MILC) are investigated. For both cases, tiny silicides were formed under the metal deposited area, and propagated toward amorphous Si films leaving crystallized Si behind at temperatures as low as 500 °C. Ni-MILC was influenced by Pd such that the lateral crystallization rate was enhanced, and the temperature for the lateral crystallization was lowered to 450 °C. Through TEM analysis and external stress experiments, it was found that the enhancement of the lateral crystallization rate was closely related to the compressive stress generated by the formation of nearby Pd2Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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