No CrossRef data available.
Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping
Published online by Cambridge University Press: 01 February 2011
Plasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E03-06
- Copyright © Materials Research Society 2008