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Study on the Diamond Field Emitter Fabricated by Transfer Mold Technique

Published online by Cambridge University Press:  10 February 2011

Byeong-Kwon Ju
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Seong-Jin Kim
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Jae-Hoon Jung
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Yun-Hi Lee
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Beom Soo Park
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Young-Joon Baik
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
Sung-Kyoo Lim
Affiliation:
Dep. Electronics Engineering, Dankook University, #29 Anseo-dong, Cheonan, Korea
Myung Hwan Oh
Affiliation:
Div. Electronics and Information Technology, KIST, Cheongryang P.O. Box 131, Seoul, Korea
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Abstract

Strip-shaped diamond-tip field emitter array was fabricated by using the transfer mold technique. The sharp turn-on characteristic was observed from the current-voltage measurement of the fabricated diamond-tip field emitter array. The turn-on characteristic of the diamond-tip field emitter array was compared with that of a flat diamond film. High emission current density was obtained from the diamond-tip field emitter array. The threshold voltage of the diamond-tip field emitter array was lower than that of a flat diamond film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

[1] Geis, M. W., Efremow, N. N., Woodhouse, J. D., McAleese, M. D., Marchywka, M., Socker, D. G., and Hochedez, J. F., IEEE Electron Device Lett., 12, 456, (1991).CrossRefGoogle Scholar
[2] Kang, W. P., Davidson, J. L., Li, Q., Xu, J. F., Kinser, D. L., and Kerns, D. V., The 8th Intl. Conf Solid-State Sensors and Actuators, and Eurosensors IX, 182, (1995).Google Scholar
[3] Nakamoto, M., Ichimura, K., Ono, T., and Nakamura, Y., IVMC'95 Tech. Dig., 186, (1995).Google Scholar
[4] Sokolich, M., Adler, E. A., Longo, R. T., Goebel, D. M., and R. T. Benton IEDM Tech. Dig., 159, (1990).Google Scholar

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