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The Study of Si, Se and O-Implanted GaAs by Slow Positrons

Published online by Cambridge University Press:  03 September 2012

S. Fujii
Affiliation:
Opto-Electronics R&D Laboratories Sumitomo Electric Industries Ltd., 1 Taya-cho Sakae-ku Yokohama 244, Japan
S. Shikata
Affiliation:
Opto-Electronics R&D Laboratories Sumitomo Electric Industries Ltd., 1 Taya-cho Sakae-ku Yokohama 244, Japan
L. Wei
Affiliation:
Opto-Electronics R&D Laboratories Sumitomo Electric Industries Ltd., 1 Taya-cho Sakae-ku Yokohama 244, Japan
S. Tanigaw
Affiliation:
Opto-Electronics R&D Laboratories Sumitomo Electric Industries Ltd., 1 Taya-cho Sakae-ku Yokohama 244, Japan
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Abstract

Variable-energy (0–30keV) positron beam studies have been carried out on 200 keV Se-implanted and 70 keV Si-implanted GaAs specimens before and after annealing for electrical activation. From the measurements of Doppler broadened profiles as a function of incident positron energy, it was found that vacancy clusters with high concentration were introduced in the annealed specimen after Se implantation. From the parallel measurement of electrical characteristics, a higher activation efficiency was found for the higher concentration of vacancy clusters. That fact implies that electrons supplied by the activation of Se also convert the charge state of As vacancies from positive to negative. In contrast, no vacancy clusters were introduced in the Si-implanted GaAs. On the other hand, oxygen clustering was found in annealed specimen after O implantation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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