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Study of a-Si:H / c-Si Heterojunctions for PV Applications

Published online by Cambridge University Press:  10 February 2011

F. Zignani
Affiliation:
Dipartimento di Chimica Applicata e Scienza dei Materiali, Bologna University, viale Risorgimento 2, 40136 Bologna, Italy
R. Galloni
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
R. Rizzoli
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
M. Ruth
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
C. Summonte
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
R. Pinghini
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
Q. Zini
Affiliation:
CNR-Lamel, via Gobetti 101,40129 Bologna, Italy
P. Rava
Affiliation:
Elettrorava S.p.A., via Don Sapino 176, 10040 Savonera (Torino), Italy
A. Madan
Affiliation:
MVSystems, Inc., 327 Lamb Lane, Golden, CO 80401, USA
Y. S. Tsuo
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden CO 80401, USA
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Abstract

a-Si:H / c-Si heterojunction diodes were produced by PECVD with varying amorphous silicon layer thickness and hydrogen dilution of the gas phase. An accurate determination of the growth rate also in the initial stages of the deposition was made possible by an original chemical method based on the dissolution of the films followed by spectroscopical analysis of the obtained solution.

The electrical characterization of the diodes confirms the generation - recombination - multitunneling nature of the transport. Although H2 dilution is important, however, beyond a certain level it is detrimental for the junction quality, probably due to the transition to a microcrystalline phase deposition. Solar cells were also produced, the best results being an open circuit voltage of 610 mV and an intrinsic efficiency of 14.2%.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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