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Study Of Al Surface Segregation In Icosahedral A162Cu25.5Fe12.5

Published online by Cambridge University Press:  10 February 2011

M. GIL-GAVATZ
Affiliation:
LSGS and GDRCINQ, Centre d'Ingénierie des Matériaux, Ecole des Mines de Nancy, Parc de Saurupt, F-54042 NANCY
D. Rouxel
Affiliation:
LSGS and GDRCINQ, Centre d'Ingénierie des Matériaux, Ecole des Mines de Nancy, Parc de Saurupt, F-54042 NANCY
P. Pigeat
Affiliation:
LSGS and GDRCINQ, Centre d'Ingénierie des Matériaux, Ecole des Mines de Nancy, Parc de Saurupt, F-54042 NANCY
B. Weber
Affiliation:
LSGS and GDRCINQ, Centre d'Ingénierie des Matériaux, Ecole des Mines de Nancy, Parc de Saurupt, F-54042 NANCY
J.-M. Dubois
Affiliation:
LSG2M and GDRCINQ, Centre d'Ingénierie des Matériaux, Ecole des Mines de Nancy, Pare de Saurupt, F-54042 NANCY
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Abstract

Surface segregation of aluminium was observed during oxidation experiments of icosahedral A162Cu25.5 Fel12.5, performed in-situ and at different temperatures in the ultra-high vacuum chamber of a scanning Auger electron spectrometer. Two regimes, below and above 770K, were observed in relation with severe segregation of Al atoms at the surface for T > 770K. We postulate that this temperature dependent segregation rate is representative of the aluminium transport towards the surface of the quasicrystal. By analogy with classical diffusion experiments, we can thus determine reasonable estimates of the activation energy for Al self-diffusion in this quasicrystal. The results are consistent with the existence of phason flips below 770K and thermal vacancies above this temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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