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Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC

Published online by Cambridge University Press:  21 March 2011

A. Klaver
Affiliation:
Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB, DELFT, The Netherlands.
J.M. Warman
Affiliation:
Delft University of Technology, Interfaculty Reactor Institute, Radiation Chemistry Department, Mekelweg 15, 2629 JB Delft, The Netherlands
M.P. de Haas
Affiliation:
Delft University of Technology, Interfaculty Reactor Institute, Radiation Chemistry Department, Mekelweg 15, 2629 JB Delft, The Netherlands
J.W. Metselaar
Affiliation:
Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB, DELFT, The Netherlands.
R.A.C.M.M. van Swaaij
Affiliation:
Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB, DELFT, The Netherlands.
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Abstract

The effects of 3-MeV electron irradiation on a-Si:H have been studied using Time-Resolved Microwave Conductivity (TRMC). A Van der Graaff electron accelerator is used to generate the probe-beam pulses for the TRMC experiment as well as for the in-situ irradiation of the samples for the degradation of the material. Using several probe-beam pulse doses, TRMC transients were obtained on samples that have been subjected to various radiation fluences. These transients were later analyzed using a simple model based on the Shockley-Read-Hall capture and emission processes. Using these simulations we deduce a relationship between the radiation fluence and the defect density in the material.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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