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Studies of Quantum Dots Fabricated by Combining Aerosol and Plasma Etching Techiques

Published online by Cambridge University Press:  28 February 2011

Lars Samuelson ,
Ivan Maximov ,
Anders Gustafsson ,
Xiao Liu ,
Werner Seifert ,
Hans-Christen Hansson  and
Alfred Wiedensohler
Lars Samuelson
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00, Lund, Sweden.
Ivan Maximov
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00, Lund, Sweden.
Anders Gustafsson
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00, Lund, Sweden.
Xiao Liu
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00, Lund, Sweden.
Werner Seifert
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00, Lund, Sweden.
Hans-Christen Hansson
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00, Lund, Sweden.
Alfred Wiedensohler
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00, Lund, Sweden.
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Abstract

A new approach has been taken for the fabrication of Quantum Dot materials to be used for physics as well as for opto-electronics applications. We used a generation technique of ultrafine aerosol Ag particles which are deposited onto the surface of GalnAs/InP quantum well structures grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The particles, ranging in size between 30 and 40 nm, are subsequently used as an etching mask. The Ag aerosol produced by homogeneous nucleation and can have a mean diameter in the range 2 – 100 nm. After size-selection, monodisperse particles with a very narrow size distribution are deposited onto the semiconductor surface at a density of about 109 cm-2. Low energy CH4/H/Ar Electron Cyclotron Resonance (ECR) plasma etching results in the formation of free-standing InP columns 50 to 80 nm in diameter and 120 to 280 nm in height. Their size and stability were found to be dependent on the etching conditions and the diameter of the particles. Low-temperature cathodoluminescence (CL) was used to evaluate the quantum dot structures fabricated by this technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 789
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. See, for example, the special section of Science, Vol 254 (1991)Google Scholar
2. Weisbuch, C. and Vinter, B., Quantum Semiconductor Structures, (Academic Press, London, 1991)Google Scholar
3. Merz, J. L. and Petroff, P. M., Materials Science and Engineering B9, 275 (1991)Google Scholar
4. Samuelson, L., Georgsson, K., Gustafsson, A., Maximov, I., Montelius, L., Nilsson, S., Seifert, W., and Semu, A., Proceedings of SPIE. Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, SPIE–1676, 154 (1992)Google Scholar
5. Saunders, W. A., Sercel, P. C., Atwater, H. A., Vahala, K. J., and Flagan, R. C., Appl. Phys. Lett. 60, 950 (1992)Google Scholar
6. Wiedensohler, A., Hansson, H.-C., Maximov, I., Samuelson, L., Appl. Phys. Lett., 61, 837 (1992)Google Scholar
7. Seifert, W., Fornell, J-O., Ledebo, L., Pistol, M-E., and Samuelson, L., Appl. Phys. Lett., 56, 1128 (1990)Google Scholar
8. Knutsen, E. O. and Whitby, K. T., J. Aerosol. Sci., 6, 443 (1975)Google Scholar
9. Wiedensohler, A. and Fissan, H. J., J. Aerosol Sci. Techn. 14, 358 (1991)Google Scholar
10. Shapoval, S., Bulkin, P., Chumakov, A., Khudobin, S., Maximov, I., and Mikhailov, G., Vacuum, 43, 195 (1992)Google Scholar
11. Gustafsson, A., Thesis, Lund University, 1991 Google Scholar
12. Devaud, B., Damen, T. C., Shah, L. and Tu, C. W., Appl. Phys. Lett. 51, 828 (1987)Google Scholar
13. Benisty, H., Sotomayer-Torrés, C. M., Weisbuch, C.. Phys. Rev B 44, 10945 (1991)Google Scholar
14. Gustafsson, A., Liu, X., Maximov, I., Samuelson, L. and Seifert, W.. (MRS fall ‘92, paper F17.4)Google Scholar
15. Jacobs, B., Emmerling, M., Forchel, A., Gyuro, I., Speier, P. and Zielinski, E., Microelectronic Engineering 17, 501 (1992).Google Scholar