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Structural Characterization of Dynamic Annealing Effects of P+ Implanted SI

Published online by Cambridge University Press:  25 February 2011

Marina Berti ,
A.V. Drigo ,
E. Gabilli ,
R. Lotti ,
G. Lulli ,
P.G. Merli  and
M. Vittori Antisari
Marina Berti
Affiliation:
Dipartimento di Fisica G.Galileo, Universita di Padova, Via Marzolo 8 - 35100 Padova, Italy
A.V. Drigo
Affiliation:
Dipartimento di Fisica G.Galileo, Universita di Padova, Via Marzolo 8 - 35100 Padova, Italy
E. Gabilli
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli 1 - 40126 Bologna, Italy
R. Lotti
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli 1 - 40126 Bologna, Italy
G. Lulli
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli 1 - 40126 Bologna, Italy
P.G. Merli
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli 1 - 40126 Bologna, Italy
M. Vittori Antisari
Affiliation:
ENEA - Divisione Scienza dei Materiali - CRE - Casaccia, CP 2400 Roma, Italy
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Abstract

Some renarks about the mechanism for dynamic annealing during high dose rate P implantation of Si are reported. TEM observations and RBS channeling measurements show that the ion bombardment enhances the amorphous to crystalline transformation in the temperature range 200 ≤ T ≤ 600°C. It is found that the ratio between the observed recrystalli-zation velocity and the thermal SPE velocity decreases with increasing temperature. This indicates that a transition temperature must exist between the ion-assisted recrystallization regime and the ?lermal SPE regime. For the energy (100 keV) and the dose rate (60,uA/cm2) used in our experiments the transition temperature is about 700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 97
Copyright
Copyright © Materials Research Society 1985

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References

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