Skip to main content Accessibility help
×
Home
Hostname: page-component-564cf476b6-2jsqd Total loading time: 0.309 Render date: 2021-06-19T23:01:57.614Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Structural and Piezoresistive Characteristics of Amorphous Silicon Carbide Films Grown on AlN/Si Substrates

Published online by Cambridge University Press:  13 June 2012

Mariana A. Fraga
Affiliation:
Institute for Advanced Studies, Department of Aerospace Science and Technology, 12228-001, S. J. dos Campos, Brazil Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil
Humber Furlan
Affiliation:
Faculty of Technology of São Paulo, Praça Cel. Fernando Prestes, 30, São Paulo –SP, 01124-060, Brazil
Rodrigo S. Pessoa
Affiliation:
Plasma and Processes Laboratory, Department of Physics, Technological Institute of Aeronautics, 12228-900, S. J. dos Campos, SP, Brazil IP&D, University of Vale do Paraíba, 12244-000, S. J. dos Campos, SP, Brazil
Luiz A. Rasia
Affiliation:
Regional University of Northwest Rio Grande do Sul State, Ijui- RS, 98700-000, Brazil
Get access

Abstract

Amorphous silicon carbide (a-SiC) thin films have been grown on aluminum nitride (AlN) intermediate layers on (100) Si substrates by RF magnetron sputtering technique. Profilometry, four-point probe method, Rutherford backscattering spectroscopy (RBS) and Fourier transform infrared (FTIR) were employed to characterize the as-deposited SiC thin films. Test structures have been developed to investigate the piezoresistive properties. These structures consist of SiC thin-film resistors on AlN/Si substrates defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. Gauge factor (GF) and temperature coefficient of resistance (TCR) measurements have been performed and demonstrated the potential of these resistors to be used as sensing elements in devices for high temperature application.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below.

References

1. de la Puente, G. G., Erlenbach, O., Torres, J. A. G., Hupfer, T., Steidl, M., De Zela, F., Weingärtner, R., Winnacker, A., Materials Science Forum 645648 (2010) 11991202.CrossRefGoogle Scholar
2. Elmazria, O. and Aubert, T., Proc. SPIE 8066 (2011) 8066021–10.Google Scholar
3. Doppalapudi, D., Sensors Based on SiC-AlN MEMS, www.electrochem.org/dl/ma/206/pdfs/1239.pdf.Google Scholar
4. Chung, G. and Lee, T., Materials Science Forum 600603 (2009) 12891292.Google Scholar
5. Jeong, Ju., Jang, K., Lee, H. S., Chung, G., Kim, G., Physica Condensed Matter 404 (2009) 710.CrossRefGoogle Scholar
6. Wu, C. H., Zorman, C. A., Mehregany, M., IEEE Sensors Journal. 6 (2006) 316324.CrossRefGoogle Scholar
7. Kuo, H., Proceedings of 12th International Conference on Transducers, Solid-State Sensors, Actuators and Microsystems (2003) 742745.CrossRefGoogle Scholar
8. Dolittle, L. R., Nucl. Instrum. Methods Phys. Res. B 9 (1985) 344351.CrossRefGoogle Scholar
9. Fraga, M. A., Furlan, H., Massi, M., Oliveira, I. C., Microsystem Technologies 16 (2010) 925930.CrossRefGoogle Scholar
10. Medeiros, H. S., Pessoa, R. S., Sagás, J. C., Fraga, M. A., Santos, L. V., Maciel, H. S., Massi, M., da Silva Sobrinho, A. S., Maia da Costa, M. E. H., Surface & Coatings Technology, 206 (2011) 17871795.CrossRefGoogle Scholar
11. Fraga, M. A., Massi, M., Oliveira, I. C., Maciel, H. S., dos Santos Filho, S. G., Mansano, R. D., J. Mater. Sci.: Mater Electron 19 (2008) 835840.Google Scholar
12. Medeiros, H. S., Pessoa, R. S., Sagás, J. C., Fraga, M. A., Santos, L. V., Maciel, H. S., Massi, M., da Silva Sobrinho, A. S., Materials Science Forum 717720 (2012) 197201.CrossRefGoogle Scholar
13. Fraga, M. A., Materials Science Forum 679680 (2011) 217220.CrossRefGoogle Scholar
14. Ziermann, R., von Berg, J., Obermeier, E., Wischmeyer, F., Niemann, E., Moller, H., Eickhoff, M., Krotz, G., Materials Science and Engineering B6162 (1999) 576578.CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Structural and Piezoresistive Characteristics of Amorphous Silicon Carbide Films Grown on AlN/Si Substrates
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Structural and Piezoresistive Characteristics of Amorphous Silicon Carbide Films Grown on AlN/Si Substrates
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Structural and Piezoresistive Characteristics of Amorphous Silicon Carbide Films Grown on AlN/Si Substrates
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *