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Structural and electrical characterization of carbon nanotube interconnects by combined transmission electron microscopy and scanning spreading resistance microscopy

Published online by Cambridge University Press:  13 September 2011

Thomas Hantschel
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
Xiaoxing Ke
Affiliation:
EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Nicolo’ Chiodarelli
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. Department of Electrical Engineering, K. U. Leuven, B-3001 Leuven, Belgium.
Andreas Schulze
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. Instituut voor Kern- en Stralingsfysica, K. U. Leuven, B-3001 Leuven, Belgium.
Hugo Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
Pierre Eyben
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
Sara Bals
Affiliation:
EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Wilfried Vandervorst
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. Instituut voor Kern- en Stralingsfysica, K. U. Leuven, B-3001 Leuven, Belgium.
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Abstract

The use of carbon nanotubes (CNT) as interconnects in future integrated circuits (IC) is being considered as a replacement for copper. As this research needs also innovative metrology solutions, we have developed a combined approach for the plane-view analysis of CNT integrated in contact holes where transmission electron microscopy (TEM) enables the quantitative measurement of density and structure of the CNT and where scanning spreading resistance microscopy (SSRM) is used to electrically map the distribution of the CNT. This paper explains the used methodologies in detail and presents results from 300 nm diameter contact holes filled with CNT of 8-12 nm in diameter and a density of about 2 x 1011 cm-2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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