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Structural and Chemical Characterization of Tungsten Gate Stack for 1 Gb Dram
Published online by Cambridge University Press: 14 March 2011
Material interaction during integration of tungsten gate stack for 1 Gb DRAM was investigated by Transition Electron Microscopy (TEM), X-ray Diffraction analysis (XRD) and Auger Electron Spectroscopy (AES). During selective side-wall oxidation tungsten gate conductor undergoes a structural transformation. The transformation results in the reduction of tungsten crystal lattice spacing, re-crystallization of tungsten and/or growth of grains. During a highly selective oxidation process, a relatively small but noticeable amount of oxygen was incorporated into the tungsten layer. The incorporation of oxygen is attributed to the formation of a stable WO x (x<2) composite.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C3.3.1
- Copyright © Materials Research Society 2000